Analog Power P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as compute.
-20 V ±12 8.2 6.5 A ±30 Continuous Source Current (Diode Conduction)a IS -2.3 A Power Dissipationa Operating Junction and Storage Temperature Range TA=25oC TA=70oC PD 2.1 W 1.3 TJ, Tstg -55 to 150 oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 10 sec Steady-State Symbol RθJA Maximum 62.5 110 Units oC/W oC/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature November, 2003 - Rev. A PRELIMINARY 1 Publication Order Number: DS-AM4919_F Analog Power AM4919P SPECIFICATIONS (TA = 25oC UNLESS OTH.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AM4910N |
Analog Power |
Dual N-Channel MOSFET | |
2 | AM4915P |
Analog Power |
Dual P-Channel MOSFET | |
3 | AM4917P |
Analog Power |
P-Channel MOSFET | |
4 | AM4902N |
Analog Power |
Dual N-Channel MOSFET | |
5 | AM4920 |
AiT Semiconductor |
30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | |
6 | AM4920N |
Analog Power |
N-Channel MOSFET | |
7 | AM4922N |
Analog Power |
N-Channel MOSFET | |
8 | AM4924N |
Analog Power |
Dual N-Channel MOSFET | |
9 | AM4926N |
Analog Power |
Dual N-Channel MOSFET | |
10 | AM4929P |
Analog Power |
MOSFET | |
11 | AM4930N |
Analog Power |
Dual N-Channel MOSFET | |
12 | AM4932N |
Analog Power |
N-Channel MOSFET |