AM4910N - Analog Power

AM4910N Dual N-Channel MOSFET

Analog Power AM4910N Dual N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA card.

Features

Power Dissipationa TA=25oC TA=70oC PD 2.1 1.3 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Casea Maximum Junction-to-Ambienta t <= 5 sec t <= 5 sec Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Symbol RθJC RθJA Maximum 40 60 Units oC/W oC/W PRELIMINARY 1 Publication Order Number: DS-AM4910_F Analog Power AM4910N SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Static Drain-Source Breakd.