The Am29BDS643 is a 64 Mbit, 1.8 Volt-only, simultaneous Read/Write, Burst Mode Flash memory device, organized as 4,194,304 words of 16 bits each. This device uses a single VCC of 1.7 to 1.9 V to read, program, and erase the memory array. A 12.0-volt V PP may be used for faster program performance if desired. The device can also be programmed in standard EPR.
When addresses have been stable for a specified amount of time, the device enters the automatic sleep mode. The system can also place the device into the standby mode . Power consumption is greatly reduced in both modes. Simultaneous Read/Write Operations with Zero Latency The Simultaneous Read/Write architecture provides simultaneous operation by dividing the memory space into two banks. The device can improve overall system performance by allowing a host system to program or erase in one bank, then immediately and simultaneously read from the other bank, with zero latency. This releases th.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AM29BDS643G |
AMD |
Burst Mode Flash Memory | |
2 | AM29BDS640G |
AMD |
Burst Mode Flash Memory | |
3 | AM29BDS640H |
AMD |
(AM29BDS128H / AM29BDS640H) Burst Mode Flash Memory | |
4 | AM29BDS128H |
AMD |
(AM29BDS128H / AM29BDS640H) Burst Mode Flash Memory | |
5 | AM29BDS320G |
AMD |
Burst Mode Flash Memory | |
6 | AM29BDS323D |
Advanced Micro Devices |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write/ Burst Mode Flash Memory | |
7 | AM29BDD160G |
AMD |
Simultaneous Read/Write Flash Memory | |
8 | AM29BL162C |
AMD |
Burst Mode Flash Memory | |
9 | AM29BL802C |
AMD |
Burst Mode Flash Memory | |
10 | AM290 |
National Semiconductor |
Monolithic N-Channel Junction FET Switches | |
11 | AM2901 |
Advanced Micro Devices |
4-Bit Bipolar MicroProcessor Slice | |
12 | AM2901A |
Advanced Micro Devices |
4-Bit Bipolar MicroProcessor Slice |