AM290 - National Semiconductor

AM290 Monolithic N-Channel Junction FET Switches

These devices combine N-channel junction FETs and bipolar transistors on a single chip for the first time in a new N-channel Bi-FET process. This technology provides the industry's only low "ON" resistance, high speed, monolithic N-channel junction FET analog switch. Unique circuit techniques are employed to achieve break-before-make switching action and con.

Features

Interfaces with standard DTL, TTL and CMOS Constant "ON" resistance with signals to i10V 00 "ON" resistance match 2 i~l typ "OFF" isolation and crosstalk less than —60 dB at 10 MHz (typ) tON'tOFF = 105 ns/95 ns typ 00 Break-before-make action Ol Applications A-to-D/D-to-A converters Data acquisition 00 Signal multiplexers Sample and hold Video switch Schematic Diagram (Typical channe 00 00 o Application Hints
* Vcc Positive Supply Voltage (VI + 15" +10 +12 VEE Negative Supply Voltage (V) -15 -20 -12 vL Logic Supply Voltage (V) +5 +5 +5 V|N vR Logic Input Reference Voltage .