AM2317 - AiT Semiconductor

AM2317 -20V P-CHANNEL ENHANCEMENT MODE MOSFET MOSFET

FEATURES The AM2317 is the P-Channel logic enhancement  mode power field effect transistor is produced using  high cell density advanced trench technology.  This high density process is especially tailored to  minimize on-state resistance. These devices are  particularly suited for low voltage application, and low in-line power loss are needed .

Features

The AM2317 is the P-Channel logic enhancement
 mode power field effect transistor is produced using
 high cell density advanced trench technology.
 This high density process is especially tailored to
 minimize on-state resistance. These devices are
 particularly suited for low voltage application, and low in-line power loss are needed in a very small outline
 surface mount package.
 -20V/-4.6A, RDS(ON)=35mΩ(typ.)@VGS=-4.5V -20V/-4.1A,RDS(ON)=45mΩ(typ.)@VGS=-2.5V -20V/-3.6A,RDS(ON)=53mΩ(typ.)@VGS=-1.8V Super high design for extremely low RDS(ON) Exceptional on-resistance and M.