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AM2317 |
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| Part Number | AM2317 |
| Manufacturer | AiT Semiconductor |
| Description | FEATURES The AM2317 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology. This high density process is espec... |
| Features |
The AM2317 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package. -20V/-4.6A, RDS(ON)=35mΩ(typ.)@VGS=-4.5V -20V/-4.1A,RDS(ON)=45mΩ(typ.)@VGS=-2.5V -20V/-3.6A,RDS(ON)=53mΩ(typ.)@VGS=-1.8V Super high design for extremely low RDS(ON) Exceptional on-resistance and M... |
| Document |
 AM2317 Data Sheet
PDF 657.24KB |
| Distributor | Stock | Price | Buy |
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