AM2313P - Analog Power

AM2313P P-Channel MOSFET

Analog Power AM2313P P - Channel Logic Level MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are voltage control small signal switch, power management in portable and battery-powe.

Features

S 0.24 A Power Dissipationa Operating Junction and Storage Temperature Range TA=25oC TA=70oC PD TJ, Tstg 0.36 0.29 -55 to 150 W oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 5 sec Steady-State Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature July, 2002 - Rev. A PRELIMINARY 1 Symbol RT HJA Maximum Units 350 400 oC/W Publication Order Number: DS-AM2313_B Analog Power AM2313P SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parame te r Symbol Test Conditions Min Limits Typ Max Unit Swi.