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The AM1011-400 device is a high power Class C transistor specifically designed for TCAS and Mode-S pulsed output and driver applications. This device is designed for operation under moderate pulse width and duty cycle pulse conditions and is capable of withstanding 15:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic .
N
1. Collector 2. Base
3. Emitter 4. Base
Value
Unit
PDISS IC VCC TJ T STG
Power Dissipation
* Device Current
*
(TC ≤ 100°C)
880 24 55 250 − 65 to +200
W A V °C °C
Collector-Supply Voltage
* Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance
* 0.17 °C/W
*Applies only to rated RF amplifier operation
September 1992
1/6
AM1011-400
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Valu e Min. Typ. Max. Unit
BVCBO BVEBO BVCER ICES hFE
IC = 50mA IE = 15mA IC = 50mA VBE = 50V VCE = 5V
IE = 0mA IC .
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|---|---|---|---|---|
| 1 | AM1011-070 |
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|
| 2 | AM1011-075 |
STMicroelectronics |
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|
| 3 | AM1011-300 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
|
| 4 | AM1011-500 |
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| 5 | AM101 |
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| 6 | AM101 |
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| 7 | AM101 |
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| 8 | AM1010 |
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| 9 | AM1010 |
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| 10 | AM1010 |
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| 12 | AM1010N |
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