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These N-Channel enhancement mode power field effect transistors are produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications suc.
1.0A, 100V, RDS(on) = 0.19Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 10 pF) Fast switching Improved dv/dt capability
PIN ASSIGNMENT The package of AM1010N is SOT-223; the pin assignment is given by:
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AM1010N
ORDER/MARKING INFORMATION Order Information
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AM1010N X X
Package Type Packing E: SOT223-3L A : Taping
ABSOLUTE MAXIMUM RATINGS Characteristics Drain-Source Voltage Drain Current Continuous (TC = 25°C) Continuous (TC = 70°C) Drain Current
– Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy Avala.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | AM1010 |
TRSYS |
1.0 TO 1.5 AMPERE SILICON MINIATURE SINGLE-PHASE BRIDGE |
|
| 2 | AM1010 |
Comchip Technology |
Silicon Miniature Single-Phase Bridge |
|
| 3 | AM1010 |
PAN JIT |
1.0 AMPERE SILICON MINIATURE SINGLE-PHASE BRIDGES |
|
| 4 | AM1010-G |
Comchip Technology |
Silicon Miniature Single-Phase Bridge |
|
| 5 | AM101 |
PAN JIT |
1.0 AMPERE SILICON MINIATURE SINGLE-PHASE BRIDGES |
|
| 6 | AM101 |
TRSYS |
1.0 TO 1.5 AMPERE SILICON MINIATURE SINGLE-PHASE BRIDGE |
|
| 7 | AM101 |
Comchip Technology |
Silicon Miniature Single-Phase Bridge |
|
| 8 | AM1011-070 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS |
|
| 9 | AM1011-075 |
STMicroelectronics |
L-BAND AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS |
|
| 10 | AM1011-300 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
|
| 11 | AM1011-400 |
STMicroelectronics |
L-BAND AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS |
|
| 12 | AM1011-500 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
|