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The AM1011-075 device is a high power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding 10:1 output VSWR at rated RF conditions. Low RF thermal resistanc.
= 25 ° C)
Symbol Parameter
PIN CONNECTION
1. Collector 2. Base
3. Emitter 4. Base
Value
Unit
PDISS IC VCC TJ T STG
Power Dissipation
* Device Current
*
(TC ≤ 100°C)
175 5.4 55 250 − 65 to +200
W A V °C °C
Collector-Supply Voltage
* Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance
* 0.86 °C/W
*Applies only to rated RF amplifier operation
September 1992
1/4
AM1011-075
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Valu e Min. Typ. Max. Unit
BVCBO BVEBO BVCER ICES hFE
IC = 10mA IE = 4mA I.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | AM1011-070 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS |
|
| 2 | AM1011-300 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
|
| 3 | AM1011-400 |
STMicroelectronics |
L-BAND AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS |
|
| 4 | AM1011-500 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
|
| 5 | AM101 |
PAN JIT |
1.0 AMPERE SILICON MINIATURE SINGLE-PHASE BRIDGES |
|
| 6 | AM101 |
TRSYS |
1.0 TO 1.5 AMPERE SILICON MINIATURE SINGLE-PHASE BRIDGE |
|
| 7 | AM101 |
Comchip Technology |
Silicon Miniature Single-Phase Bridge |
|
| 8 | AM1010 |
TRSYS |
1.0 TO 1.5 AMPERE SILICON MINIATURE SINGLE-PHASE BRIDGE |
|
| 9 | AM1010 |
Comchip Technology |
Silicon Miniature Single-Phase Bridge |
|
| 10 | AM1010 |
PAN JIT |
1.0 AMPERE SILICON MINIATURE SINGLE-PHASE BRIDGES |
|
| 11 | AM1010-G |
Comchip Technology |
Silicon Miniature Single-Phase Bridge |
|
| 12 | AM1010N |
AXElite |
100V N-Channel MOSFET |
|