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IGBT – Hybrid, Field Stop, Trench 650 V, 75 A, TO247 AFGHL75T65SQDC Using the novel field stop 4th generation IGBT technology and the 1.5th generation SiC Schottky Diode technology, AFGHL75T65SQDC offers the optimum performance with both low conduction and switching losses for high efficiency operations in various applications, especially totem pole bridge.
• Maximum Junction Temperature: TJ = 175°C
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 75 A
• 100% of the Parts are Tested for ILM (Note 2)
• Fast Switching
• Tight Parameter Distribution
• No Reverse Recovery/No Forward Recovery
• AEC−Q101 Qualified and PPAP Capable
Typical Applications
• Automotive
• On & Off Board Chargers
• DC−DC Converters
• PFC
• Industrial Inverter
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector−to−Emitter Voltage
Gate−to−Emitter Voltage Transient Gate−to−Emitte.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | AFGHL75T65SQD |
ON Semiconductor |
IGBT |
|
| 2 | AFGHL75T65SQDT |
ON Semiconductor |
IGBT |
|
| 3 | AFGHL75T65SQ |
ON Semiconductor |
IGBT |
|
| 4 | AFGHL25T120RHD |
ON Semiconductor |
IGBT |
|
| 5 | AFGHL25T120RLD |
ON Semiconductor |
IGBT |
|
| 6 | AFGHL30T65RQDN |
ON Semiconductor |
IGBT |
|
| 7 | AFGHL40T120RHD |
ON Semiconductor |
IGBT |
|
| 8 | AFGHL40T65RQDN |
ON Semiconductor |
IGBT |
|
| 9 | AFGHL40T65SPD |
ON Semiconductor |
IGBT |
|
| 10 | AFGHL40T65SQ |
ON Semiconductor |
IGBT |
|
| 11 | AFGHL40T65SQD |
ON Semiconductor |
IGBT |
|
| 12 | AFGHL50T65RQDN |
ON Semiconductor |
IGBT |
|