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Field Stop Trench IGBT 650 V, 75 A, TO247 AFGHL75T65SQ Using the novel field stop 4th generation IGBT technology, AFGHL75T65SQ offers the optimum performance with both low conduction and switching losses for high efficiency operations in various applications, which does not require reverse recovery specification. Features • Maximum Junction Temperature: TJ.
• Maximum Junction Temperature: TJ = 175°C
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 75 A
• 100% of the Parts are Tested for ILM (Note 2)
• Fast Switching
• Tight Parameter Distribution
• AEC−Q101 Qualified and PPAP Capable
Typical Applications
• Automotive
• On & Off Board Chargers
• DC−DC Converters
• PFC
• Industrial Inverter
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector−to−Emitter Voltage
Gate−to−Emitter Voltage Transient Gate−to−Emitter Voltage
VCES 650
V
VGES ±20
V
±30
.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | AFGHL75T65SQD |
ON Semiconductor |
IGBT |
|
| 2 | AFGHL75T65SQDC |
ON Semiconductor |
Hybrid IGBT |
|
| 3 | AFGHL75T65SQDT |
ON Semiconductor |
IGBT |
|
| 4 | AFGHL25T120RHD |
ON Semiconductor |
IGBT |
|
| 5 | AFGHL25T120RLD |
ON Semiconductor |
IGBT |
|
| 6 | AFGHL30T65RQDN |
ON Semiconductor |
IGBT |
|
| 7 | AFGHL40T120RHD |
ON Semiconductor |
IGBT |
|
| 8 | AFGHL40T65RQDN |
ON Semiconductor |
IGBT |
|
| 9 | AFGHL40T65SPD |
ON Semiconductor |
IGBT |
|
| 10 | AFGHL40T65SQ |
ON Semiconductor |
IGBT |
|
| 11 | AFGHL40T65SQD |
ON Semiconductor |
IGBT |
|
| 12 | AFGHL50T65RQDN |
ON Semiconductor |
IGBT |
|