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AD100-8 - First Sensor

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AD100-8 Photodiode

AD100-8 TO Order # 500011; 501171 Version 28-10-11 # 501171 Features • APD with 0.008 mm² active area • 100 µm diameter active area • High gain at low bias voltage • Fast rise time, low capacitance • Optimum gain: 50-60 Description Circular active area APD chip with 100 µm diameter. Metal can type hermetic TO52 package with clear glass window. Two TO52 typ.

Features


• APD with 0.008 mm² active area
• 100 µm diameter active area
• High gain at low bias voltage
• Fast rise time, low capacitance
• Optimum gain: 50-60 Description Circular active area APD chip with 100 µm diameter. Metal can type hermetic TO52 package with clear glass window. Two TO52 types available, customization on request. Application
• Laser range finder
• High speed photometry
• High speed optical communications
• Medical equipment RoHS 2002/95/EC Absolute maximum ratings Symbol Parameter Min Max TSTG TOP Mmax Storage temp Operating temp Gain (IP0 = 1 nA) -55 125 -40 100 200 I.

The same part from a different manufacturer

Datasheet AD100-8 - First Sensor AD100-8

AD100-8 SMD Order # 501810; 501811; 501812 Version 28-10-11 Features • APD with 0.008 mm² active area • 100 µm diameter.

Datasheet AD100-8 - HY-LINE AD100-8

AD100-8 TO52S1 Avalanche Photodiode Special characteristics: high gain at low bias voltage fast rise time 100 µm diamete.

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