AD100-8-TO52-S1 - Pacific Silicon Sensor

AD100-8-TO52-S1 Photodiode

AD100-8-TO52-S1 Order # 06-035 OMPLIANT ACTIVE AREA: 0.00785 mm 2 (100 µm DIA) Ø 5.40 Ø 3.00 116° VIEWING Ø 4.70 ANGLE PIN 1 CATHODE Ø0.46 3 PL Ø 2.54 PIN CIRCLE FRONTSIDE VIEW 2.70 3.60 ±1 12.7 3 PL PIN 4 CASE PIN 3 ANODE BACKSIDE VIEW RESPONSIVITY (A/W) RoH FEATURES • ∅ 100 µm active area • High gain at low bias voltage • Fast rise time • .

Features

• ∅ 100 µm active area
• High gain at low bias voltage
• Fast rise time
• Low capacitance DESCRIPTION 0.00785 mm2 High Speed, High Gain Avalanche Photodiode with N on P construction. Hermetically packaged in a TO-52-S1 with a clear borosilicate glass window cap. APPLICATIONS
• High speed optical communications
• Laser range finder
• Medical equipment
• High speed photometry S ABSOLUTE MAXIMUM RATING SYMBOL PARAMETER MIN TSTG TOP TSOLDERING Storage Temp Operating Temp Soldering Temp 10 seconds -55 -40 Electrical Power Dissipation @ 22°C - Optical Peak Value, once for 1 second - IPH.