AD100-8 |
Part Number | AD100-8 |
Manufacturer | HY-LINE |
Description | AD100-8 TO52S1 Avalanche Photodiode Special characteristics: high gain at low bias voltage fast rise time 100 µm diameter active area low capacitance Parameters: (at 20 ±2°C) Active Area Dark Current... |
Features |
creasing bias voltage.
Package (TO52S1):
CASE ANODE
4 31
45°
∅ 2.54 ∅ 5.4 ± 0.2
∅ 4.7 ± 0.1 ∅ 2.5 ± 0.1 ∅ 2.0 min.
CATHODE
0.9 ± 0.3
0.5 max. 3.6 ± 0.2
2.7 ± 0.2
sensitive surface
13 ± 1.0
0.4 max.
∅ 0.45
Chip: AD100-8
diam. active area: 100 µm
1
3 4
view without window cap
www.silicon-sensor.com
Version: 04-10-26 Specification before: SSO-AD-100-8-TO52-S1
www.pacific-sensor.com
Sabs (A/W)
0 ,6 0 0 0 ,5 0 0 0 ,4 0 0 0 ,3 0 0 0 ,2 0 0 0 ,1 0 0 0 ,0 0 0
400
Spectral Responsivity at M=1
series - 8
500
600
700
800
W a v e le n g th (n m )
900
1000 1100
Sabs (A/W)
60 50... |
Document |
AD100-8 Data Sheet
PDF 310.04KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | AD100-8 |
First Sensor |
Photodiode | |
2 | AD100-8 |
First Sensor |
APD | |
3 | AD100-8-TO52-S1 |
Pacific Silicon Sensor |
Photodiode | |
4 | AD100 |
Microsemi Corporation |
SCRs 1.5 Amp/ Planar | |
5 | AD100 |
TELEFUNKEN |
NF Triode |