WE1 CE1 WE2 CE2 WE3 CE3 WE4 CE4 I/O0-31 Data I/O A0 – A16 OE A0–16 Address Inputs WE1–4 Write Enables 128Kx8 128Kx8 128Kx8 .
Preliminary
s 4 Low Power CMOS 128K x 8 SRAMs in one MCM
s Overall configuration as 128K x 32
s Tolerant to 30KRad (Si) s Latch-up Immunity to 112MeV/(mg/cm2)
s Input and Output TTL Compatible
s 35 & 45ns Access Times
s Full Military (-55°C to +125°C) Temperature Range
s For Class K devices per MIL-PRF-38534 - Consult Factory
s +5V Power Supply
s Choice of 4 Hermetically sealed Co-fired Packages: q 68
–Lead, Low Profile CQFP (F1), 1.56"SQ x .140"max q 68
–Lead, Dual-Cavity CQFP (F2), .88"SQ x .20"max (.18"max thickness available, contact factory for details) (Drops into the 68 Lead JED.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ACT-D1M96S |
Aeroflex Circuit Technology |
ACT-D1M96S High Speed 96 MegaBit 3.3V Synchronous DRAM Multichip Module | |
2 | ACT-E128K32 |
Aeroflex |
High Speed 4 Megabit EEPROM Multichip Module | |
3 | ACT-F128K32 |
Aeroflex |
High Speed 4 Megabit FLASH Multichip Module | |
4 | ACT-F128K8 |
Aeroflex |
High Speed 1 Megabit Monolithic FLASH | |
5 | ACT-F1M32 |
Aeroflex |
High Speed 32 Megabit Boot Block FLASH Multichip Module | |
6 | ACT-F2M32A |
Aeroflex |
High Speed 64 Megabit Sector Erase FLASH Multichip Module | |
7 | ACT-F4M32A |
Aeroflex |
High Speed 128 Megabit Sector Erase FLASH Multichip Module | |
8 | ACT-F512K32 |
Aeroflex |
High Speed 16 Megabit FLASH Multichip Module | |
9 | ACT-F512K8 |
Aeroflex |
High Speed 4 Megabit Monolithic FLASH | |
10 | ACT-PD1M16 |
Aeroflex |
16 Megabit Plastic Monolithic DRAM | |
11 | ACT-PS512K8 |
Aeroflex |
4 Megabit Plastic Monolithic SRAM | |
12 | ACT-PS512K8 |
Aeroflex Circuit Technology |
ACT-PS512K8 High Speed 4 Megabit Plastic Monolithic SRAM |