ACT–F4M32A High Speed 128 Megabit Sector Erase FLASH Multichip Module Advanced Features CIRCUIT TECHNOLOGY www.aeroflex.com/act1.htm s 8 Low Voltage/Power AMD 2M x 8 FLASH Die in One s Ready/Busy output (RY/BY) – Hardware method for MCM Package detection of program or erase cycle completion s Overall Configuration is 4M x 32 s Hardware RESET pin – Re.
CIRCUIT TECHNOLOGY www.aeroflex.com/act1.htm
s 8 Low Voltage/Power AMD 2M x 8 FLASH Die in One s Ready/Busy output (RY/BY)
– Hardware method for
MCM Package
detection of program or erase cycle completion
s Overall Configuration is 4M x 32
s Hardware RESET pin
– Resets internal state machine
s +5V Power Supply / +5V Programing Operation
to the read mode
s Access Times of 100, 120 and 150 ns
s Erase/Program Cycles
– 100,000 Minimum (+25°C)
s Sector erase architecture (Each Die) q 32 uniform sectors of 64 Kbytes each q Any combination of sectors can be erased. Also supports full chip era.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ACT-F128K32 |
Aeroflex |
High Speed 4 Megabit FLASH Multichip Module | |
2 | ACT-F128K8 |
Aeroflex |
High Speed 1 Megabit Monolithic FLASH | |
3 | ACT-F1M32 |
Aeroflex |
High Speed 32 Megabit Boot Block FLASH Multichip Module | |
4 | ACT-F2M32A |
Aeroflex |
High Speed 64 Megabit Sector Erase FLASH Multichip Module | |
5 | ACT-F512K32 |
Aeroflex |
High Speed 16 Megabit FLASH Multichip Module | |
6 | ACT-F512K8 |
Aeroflex |
High Speed 4 Megabit Monolithic FLASH | |
7 | ACT-D1M96S |
Aeroflex Circuit Technology |
ACT-D1M96S High Speed 96 MegaBit 3.3V Synchronous DRAM Multichip Module | |
8 | ACT-E128K32 |
Aeroflex |
High Speed 4 Megabit EEPROM Multichip Module | |
9 | ACT-PD1M16 |
Aeroflex |
16 Megabit Plastic Monolithic DRAM | |
10 | ACT-PS512K8 |
Aeroflex |
4 Megabit Plastic Monolithic SRAM | |
11 | ACT-PS512K8 |
Aeroflex Circuit Technology |
ACT-PS512K8 High Speed 4 Megabit Plastic Monolithic SRAM | |
12 | ACT-RS128K32 |
Aeroflex |
4 Megabit SRAM Multichip Module |