ACT–F512K32 High Speed 16 Megabit FLASH Multichip Module Features CIRCUIT TECHNOLOGY www.aeroflex.com ■ 4 Low Power 512K x 8 FLASH Die in One MCM Package ■ TTL Compatible Inputs and CMOS Outputs ■ Access Times of 60, 70, 90, 120 and 150ns ■ +5V Programing, 5V ±10% Supply ■ 100,000 Erase/Program Cycles ■ Low Standby Current ■ Page Program Operation and Int.
CIRCUIT TECHNOLOGY
www.aeroflex.com
■ 4 Low Power 512K x 8 FLASH Die in One MCM Package
■ TTL Compatible Inputs and CMOS Outputs
■ Access Times of 60, 70, 90, 120 and 150ns
■ +5V Programing, 5V ±10% Supply
■ 100,000 Erase/Program Cycles
■ Low Standby Current
■ Page Program Operation and Internal Program
Control Time
■ Sector Architecture (Each Die)
● 8 Equal size sectors of 64K bytes each
● Any Combination of Sectors can be erased with one command sequence
● Supports full chip erase
■ Embedded Erase and Program Algorithms
■ MIL-PRF-38534 Compliant MCMs Available
■ Industry Standard Pinouts
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ACT-F512K8 |
Aeroflex |
High Speed 4 Megabit Monolithic FLASH | |
2 | ACT-F128K32 |
Aeroflex |
High Speed 4 Megabit FLASH Multichip Module | |
3 | ACT-F128K8 |
Aeroflex |
High Speed 1 Megabit Monolithic FLASH | |
4 | ACT-F1M32 |
Aeroflex |
High Speed 32 Megabit Boot Block FLASH Multichip Module | |
5 | ACT-F2M32A |
Aeroflex |
High Speed 64 Megabit Sector Erase FLASH Multichip Module | |
6 | ACT-F4M32A |
Aeroflex |
High Speed 128 Megabit Sector Erase FLASH Multichip Module | |
7 | ACT-D1M96S |
Aeroflex Circuit Technology |
ACT-D1M96S High Speed 96 MegaBit 3.3V Synchronous DRAM Multichip Module | |
8 | ACT-E128K32 |
Aeroflex |
High Speed 4 Megabit EEPROM Multichip Module | |
9 | ACT-PD1M16 |
Aeroflex |
16 Megabit Plastic Monolithic DRAM | |
10 | ACT-PS512K8 |
Aeroflex |
4 Megabit Plastic Monolithic SRAM | |
11 | ACT-PS512K8 |
Aeroflex Circuit Technology |
ACT-PS512K8 High Speed 4 Megabit Plastic Monolithic SRAM | |
12 | ACT-RS128K32 |
Aeroflex |
4 Megabit SRAM Multichip Module |