ACE4922BEM - ACE Technology

ACE4922BEM Dual N-Channel Enhancement Mode Field Effect Transistor

The ACE4922B is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook comput.

Features

e Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Reverse Drain Current Continuous Pulsed Total Power Dissipation Channel Temperature Storage Temperature Range VDSS VGSS ID IDP
*1 IDR IDR
*1 Pd
*2 Tch Tstg 60 ±20 115 800 115 800 225 150 -55 to150 V V mA mA mW OC OC Note: 1. Pw≦10µs, Duty cycle≦1 %。 2. When mounted on a 1
*0.75
*0.062 inch glass epoxy board。 Electrical CharacteristicsTA=25 OC unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS(Note 2) Drain-Source Breakdow.