ACE4908A - ACE Technology

ACE4908A Dual P-Channel Enhancement Mode MOSFET

The ACE4908A is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook comput.

Features

• P-Channel -20V/1.0A,RDS (ON)= 520mΩ@VGS=-4.5V -20V/0.8A,RDS (ON)= 700mΩ@VGS=-2.5V -20V/0.7A,RDS (ON)= 950mΩ@VGS=-1.8V
• Super high density cell design for extremely low RDS (ON)
• Exceptional on-resistance and maximum DC current capability APPLICATIONS
• Power Management in Note book
• Portable Equipment
• Battery Powered System
• DC/DC Converter
• Load Switch
• DSC
• LCD Display inverter VER 1.1 1 Absolute Maximum Ratings ACE4908A Dual P-Channel Enhancement Mode MOSFET Parameter Symbol Max Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current(.