ACE4010M - ACE Technology

ACE4010M N-Channel MOSFET

ACE4010M uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter. Features • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Applications: • PoE Power Sourcing Equip.

Features

• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed Applications:
• PoE Power Sourcing Equipment
• PoE Powered Devices
• Telecom DC/DC converters
• White LED boost converters Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current b TC=25°C Continuous Source Current (Diode Conduction) Power Dissipation TC=25°C Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 100 ±20 26 50 50 50 -55 to 175 Unit V A A W °C THERMAL RESISTANCE RATINGS Parameter Maxim.