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ACE1421M - ACE Technology

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ACE1421M P-Channel MOSFET

The ACE1421M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Features • Low rDS(on) trench technology • Low thermal impedance .

Features


• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed Applications
• Load Switches
• DC/DC Conversion
• Motor Drives Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a TA=25℃ TA=70℃ Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a TA=25℃ TA=70℃ Operating temperature / storage temperature Symbol Limit Units VDS -20 V VGS ±8 V -8.8 ID A -7 IDM -40 A IS -5 A 3 PD W 1.9 TJ/TSTG -55~150 ℃ THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambi.

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