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ACE1420M - ACE Technology

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ACE1420M N-Channel MOSFET

The ACE1420M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Features • Low rDS(on) trench technology • Low thermal impedance .

Features


• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed Applications
• Power Routing
• Li Ion Battery Packs
• Level Shifting and Driver Circuits Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b TA=25℃ TA=70℃ Continuous Source Current (Diode Conduction) a Power Dissipation a TA=25℃ TA=70℃ Operating temperature / storage temperature Symbol Limit Units VDS 20 V VGS ±8 V 15 ID A 11.9 IDM 60 A IS 2.9 A 3 PD W 1.9 TJ/TSTG -55~150 ℃ THERMAL RESISTANCE RATINGS Parameter Symbol .

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