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The ACE1512E uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 8V. It is ESD protected. Features • VDS (V)=20V • ID=6.5A (VGS=4.5V) • RDS(ON)<21mΩ (VGS=4.5V) • RDS(ON)<25mΩ (VGS=2.5V) • RDS(ON)<33mΩ (VGS=1.8V) • ESD Protected : 2000V Absolute Maximum Ratings Par.
• VDS (V)=20V
• ID=6.5A (VGS=4.5V)
• RDS(ON)<21mΩ (VGS=4.5V)
• RDS(ON)<25mΩ (VGS=2.5V)
• RDS(ON)<33mΩ (VGS=1.8V)
• ESD Protected : 2000V
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
*AC TA=25℃ TA=70℃
Drain Current (Pulsed)
*B
Power Dissipation
TA=25℃ TA=70℃
Operating temperature / storage temperature
Symbol Ratings Unit
VDSS 20 V
VGSS ±8 V
6.5
ID
A 5.2
IDM 24 A
1
PD
W 0.64
TJ/TSTG -55~150 ℃
Packaging Type TSOT-23-3
VER 1.1 1
ACE1512E
N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
Ordering in.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | ACE1501 |
Fairchild Semiconductor |
Arithmetic Controller Engine |
|
| 2 | ACE1502 |
Fairchild Semiconductor |
Arithmetic Controller Engine |
|
| 3 | ACE150x |
ACE Technology |
PWM Step-Down DC/DC Converter |
|
| 4 | ACE1522B |
ACE Technology |
P-Channel Enhancement Mode Field Effect Transistor |
|
| 5 | ACE1526B |
ACE Technology |
P-Channel Enhancement Mode Field Effect Transistor |
|
| 6 | ACE1551A |
ACE Technology |
N-Channel MOSFET |
|
| 7 | ACE1001 |
Fairchild Semiconductor |
Arithmetic Controller Engine |
|
| 8 | ACE1020M |
ACE Technology |
N-Channel MOSFET |
|
| 9 | ACE1085 |
ACE Technology |
3A Low Dropout Linear Regulator |
|
| 10 | ACE1101 |
Fairchild Semiconductor |
Arithmetic Controller Engine (ACEx) for Low Power Applications |
|
| 11 | ACE1117 |
ACE Technology |
1A Positive Voltage Regulators |
|
| 12 | ACE1202 |
Fairchild Semiconductor |
Arithmetic Controller Engine |
|