A1309A - Panasonic Semiconductor

A1309A 2SA1309A

Transistor 2SA1309A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SC3311A Unit: mm 4.0±0.2 3.0±0.2 s Features q q q Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Sym.

Features

q q q Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings
  –60
  –50
  –7
  –200
  –100 300 150
  –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1:Emitter 2:Collector 3:Base 1 2 3 1.27 1.27 2.54±0.15 EIAJ:SC
  –72 New S Type Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to.