■■APPLICATION:GENERAL PURPOSE APPLICATION. ■■MAXIMUM RATINGS(Ta=25℃) PARAMETER SYMBOL RATING UNIT Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC PC TJ Tstg -30 V -25 V -5 V -100 mA 300 mW 150 ℃ ﹣55~150 ℃ A1309 —PNP sili.
0
MHz Ic= -1mA,VCE= -10V
Common Base Output Capacitance Cob
4 7 PF VCB= -10V, IE=0, f = 1MHz
Power Gain
GP
1.0 10
dB VCE= -6V,Ic= -0.1mA,f= 1MHz,Rg=10K=
■
■hFE Classification
Classification hFE
O ≥400
Y
.
New applications for linear output Hall-effect sensors, such as displacement and angular position, require higher accura.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | A1300 |
Toshiba Semiconductor |
2SA1300 | |
2 | A1301 |
Allegro MicroSystems |
Continuous-Time Ratiometric Linear Hall Effect Sensor | |
3 | A1302 |
Allegro MicroSystems |
Continuous-Time Ratiometric Linear Hall Effect Sensor | |
4 | A1303 |
Sanken electric |
2SA1303 | |
5 | A1304 |
SavantIC |
2SA1304 | |
6 | A1304 |
Allegro |
Linear Hall-Effect Sensor | |
7 | A1306 |
Toshiba |
2SA1306 | |
8 | A1307 |
SavantIC |
Silicon PNP Power Transistors | |
9 | A1308 |
Allegro |
Linear Hall-Effect Sensor | |
10 | A1309A |
Panasonic Semiconductor |
2SA1309A | |
11 | A13 |
Allwinner Technology |
ARM Cortex-A8 | |
12 | A1310AQ |
Sony |
Single Chip Processor |