A1300 - Toshiba Semiconductor

A1300 2SA1300

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1300 Strobe Flash Applications Medium Power Amplifier Applications 2SA1300 Unit: mm · High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A) · Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = .

Features

cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = -20 V, IE = 0 IEBO VEB = -6 V, IC = 0 V (BR) CEO IC = -10 mA, IB = 0 V (BR) EBO IE = -1 mA, IC = 0 hFE (1) VCE = -1 V, IC = -0.5 A (Note 2) hFE (2) VCE (sat) VBE fT Cob VCE = -1 V, IC = -4 A IC = -2 A, IB = -50 mA VCE = -1 V, IC = -2 A VCE = -1 V, IC = -0.5 A VCB = -10 V, IE = 0, f = 1 MHz Note 2: hFE (1) classification Y: 140~280, GR: 200~400, BL: 300~600 Min Typ. Max.