This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SWITC.
0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature
Value 75 75 ± 16 80 80 320 300 2 12 930 -55 to 175
Unit V V V A A A W W/°C V/ns mJ °C
EAS (2) Tstg Tj
(
•)Current Limited by Package (
•
•) Pulse width limited by safe operating area.
(1) ISD ≤80A, di/dt ≤960A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (2) Starting T j = 25 oC, ID = .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 80NF70 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
2 | 80NF03L-04 |
STMicroelectronics |
STP80NF03L-04 | |
3 | 80NF10 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
4 | 80NF55-06 |
STMicroelectronics |
STB80NF55-06 | |
5 | 80N02 |
ON Semiconductor |
Power MOSFET | |
6 | 80N03 |
GFD |
MOSFET | |
7 | 80N03L |
Siemens |
SPB80N03L | |
8 | 80N055 |
NEC |
NP80N055 | |
9 | 80N06 |
Inchange Semiconductor |
N-Channel MOSFET | |
10 | 80N06 |
UTC |
60V N-CHANNEL POWER MOSFET | |
11 | 80N07 |
UTC |
N-CHANNEL MOSFET | |
12 | 80N08 |
Unisonic Technologies |
N-CHANNEL MOSFET |