The Nell 75N10 is a three-terminal silicon device with current conduction capability of 75A, fast switching speed, low on-state resistance, breakdown voltage rating of 100V, and max. threshold voltage of 5 volts. They are designed as an extremely efficient and reliable device for use in a wide variety of applications. These transistors can be operated direct.
RDS(ON) = 0.025Ω @ VGS = 10V Ultra low gate charge(74nC typical) Low reverse transfer capacitance (CRSS = 275pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D (Drain) G (Gate) S (Source) PRODUCT SUMMARY ID (A) ID (A), Package Limited VDSS (V) RDS(ON) (Ω) QG(nC) typical 75 75 100 0.025 @ VGS = 10V 74 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL PARAMETER TEST CONDITIONS VALUE VDSS VDGR VGS ID IDM IAR EAR EAS Drain to Source voltage Drain to Gate voltage Gate to Source voltage Continu.
isc N-Channel Mosfet Transistor INCHANGE Semiconductor 75N10 ·FEATURES ·Drain Current ID= 75A@ TC=25℃ ·Drain Source Vo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 75N120A |
IXYS Corporation |
IXDN75N120A | |
2 | 75N05 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
3 | 75N05 |
Vishay |
SUB75N05 | |
4 | 75N05E |
INCHANGE |
N-Channel MOSFET | |
5 | 75N06 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
6 | 75N08 |
CHONGQING PINGYANG |
N-CHANNEL MOSFET | |
7 | 75N08 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
8 | 75N08 |
Fairchild Semiconductor |
FDP75N08 | |
9 | 75N08B |
CHONGQING PINGYANG |
N-CHANNEL MOSFET | |
10 | 75N08F |
CHONGQING PINGYANG |
N-CHANNEL MOSFET | |
11 | 75N08H |
CHONGQING PINGYANG |
N-CHANNEL MOSFET | |
12 | 75N43102 |
IDT |
NETWORK SEARCH ENGINE 32K x 72 Entries |