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75N10 - nELL

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75N10 N-Channel Power MOSFET

The Nell 75N10 is a three-terminal silicon device with current conduction capability of 75A, fast switching speed, low on-state resistance, breakdown voltage rating of 100V, and max. threshold voltage of 5 volts. They are designed as an extremely efficient and reliable device for use in a wide variety of applications. These transistors can be operated direct.

Features

RDS(ON) = 0.025Ω @ VGS = 10V Ultra low gate charge(74nC typical) Low reverse transfer capacitance (CRSS = 275pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D (Drain) G (Gate) S (Source) PRODUCT SUMMARY ID (A) ID (A), Package Limited VDSS (V) RDS(ON) (Ω) QG(nC) typical 75 75 100 0.025 @ VGS = 10V 74 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL PARAMETER TEST CONDITIONS VALUE VDSS VDGR VGS ID IDM IAR EAR EAS Drain to Source voltage Drain to Gate voltage Gate to Source voltage Continu.

The same part from a different manufacturer

Datasheet 75N10 - Inchange Semiconductor 75N10

isc N-Channel Mosfet Transistor INCHANGE Semiconductor 75N10 ·FEATURES ·Drain Current ID= 75A@ TC=25℃ ·Drain Source Vo.

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