75N06 - Inchange Semiconductor

75N06 N-Channel MOSFET Transistor

·High current capability ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Regulator ·High current,high speed switching ·Solenoid and relay drivers ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) .

Features

ECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=0.25mA VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA VSD Diode Forward On-Voltage IS=75A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=40A IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current tr Rise Time td(on) Turn-on Delay Time VDS= 60V; VGS= 0 VGS=10V;ID=40A; VDD=25V;RG=50Ω MIN TYPE MAX UNIT 60 V 2.0 4.0 V 1.6 V 0.014 Ω ±100 nA 250 µA 270 ns 1300 NOTICE： ISC reserves the rights to make changes of the.