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·Drain Current ID= 75A@ TC=25℃ ·Drain Source Voltage- : VDSS= 50V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 50 ±30 75 V V A ID(puls) Pulse Drain Current 200 A .
RAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current tr Rise Time td(on) Turn-on Delay Time tf Fall Time td(off) Turn-off Delay Time CONDITIONS VGS= 0; ID= 250µA VDS= VGS; ID=250µA IS=75A ;VGS= 0 VGS= 10V; ID=75A VGS= ±30V;VDS= 0 VDS= 40V; VGS= 0 VGS=10V; ID=37.5A; VDD=25V; RL=0.67Ω MIN TYPE MAX UNIT 50 V 2.0 4.0 V 2.5 V 0.01 Ω ±100 nA 1 µA 75 17 ns 17 70 isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark PD.
75N05 - Vishay
SUP/SUB75N05-06 Vishay Siliconix N-Channel 50-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 50 rDS(on) (W) 0.006 .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 75N05E |
INCHANGE |
N-Channel MOSFET |
|
| 2 | 75N06 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | 75N08 |
CHONGQING PINGYANG |
N-CHANNEL MOSFET |
|
| 4 | 75N08 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | 75N08 |
Fairchild Semiconductor |
FDP75N08 |
|
| 6 | 75N08B |
CHONGQING PINGYANG |
N-CHANNEL MOSFET |
|
| 7 | 75N08F |
CHONGQING PINGYANG |
N-CHANNEL MOSFET |
|
| 8 | 75N08H |
CHONGQING PINGYANG |
N-CHANNEL MOSFET |
|
| 9 | 75N10 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 10 | 75N10 |
nELL |
N-Channel Power MOSFET |
|
| 11 | 75N120A |
IXYS Corporation |
IXDN75N120A |
|
| 12 | 75N43102 |
IDT |
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