5N60F - GFD

5N60F 600V N-Channel MOSFET

This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low on resistance.low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually.

Features

• 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V
• Low gate charge ( typical 17nC)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability Ordering Information PART NUMBER PACKAGE BRAND 5N60/5N60F TO-220/220F 0GFD www.goford.cn TEL：0755-86350980 FAX：0755-86350963 5N60/5N60F Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter 5N60 5N60F VDSS ID Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 10.