These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well.
• 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V
• Low gate charge ( typical 15 nC)
• Low Crss ( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
GS
D2-PAK
FQB Series
GDS
I2-PAK
FQI Series
D
!
G!
●
◀▲
●
●
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitiv.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 5N60 |
nELL |
N-Channel Power MOSFET | |
2 | 5N60 |
ROUM |
5A 600V N-channel Enhancement Mode Power MOSFET | |
3 | 5N60 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
4 | 5N60 |
UTC |
N-CHANNEL POWER MOSFET | |
5 | 5N60-CB |
UTC |
N-CHANNEL MOSFET | |
6 | 5N60-TC2 |
UTC |
600V N-CHANNEL POWER MOSFET | |
7 | 5N60F |
GFD |
600V N-Channel MOSFET | |
8 | 5N60K-MT |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
9 | 5N60Z |
UNISONIC TECHNOLOGIES |
5A 600V N-CHANNEL POWER MOSFET | |
10 | 5N65 |
nELL |
N-Channel Power MOSFET | |
11 | 5N65 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
12 | 5N65 |
GME |
N-Channel Power Mosfet |