·Drain Current ID= 5.6A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·AC Adapter, Battery Charge and SMPS ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Volt.
0 SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage IS=5.6A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=2.5A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 MIN TYPE MAX UNIT 600 V 2.0 4.0 V 1.5 V 1.5 Ω ±100 nA 10 µA SWITCHING CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS Td(on) Turn-on Delay Time Tr Rise Time Td(off) Turn-off Delay Time VDD=300V,ID=5A RG=25Ω Tf Fall.
The Nell 5N60 is a three-terminal silicon device with current conduction capability of 5A, fast switching speed, low on-.
The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time,.
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 5N60-CB |
UTC |
N-CHANNEL MOSFET | |
2 | 5N60-TC2 |
UTC |
600V N-CHANNEL POWER MOSFET | |
3 | 5N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
4 | 5N60F |
GFD |
600V N-Channel MOSFET | |
5 | 5N60K-MT |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
6 | 5N60Z |
UNISONIC TECHNOLOGIES |
5A 600V N-CHANNEL POWER MOSFET | |
7 | 5N65 |
nELL |
N-Channel Power MOSFET | |
8 | 5N65 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
9 | 5N65 |
GME |
N-Channel Power Mosfet | |
10 | 5N65 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
11 | 5N65-CQ |
UTC |
N-CHANNEL MOSFET | |
12 | 5N65K |
UNISONIC TECHNOLOGIES |
5A 650V N-CHANNEL POWER MOSFET |