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This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive. Features • 2 x N + 2 x P channels in a SOIC package • Low voltage (VGS = 4.5 V) gate drive Applications • DC Motor control • DC-AC Inverters Ordering information Device 5HB06N8 Device marking WFS 5HB06N8 Reel size (inches) 13 Tape width Quantity (.
low on-resistance achievable with low gate drive.
Features
• 2 x N + 2 x P channels in a SOIC package
• Low voltage (VGS = 4.5 V) gate drive
Applications
• DC Motor control
• DC-AC Inverters
Ordering information
Device 5HB06N8
Device marking
WFS 5HB06N8
Reel size (inches)
13
Tape width Quantity
(mm)
per reel
12
2,500
www.maspowersemi.com
1
5HB06N8
H-BRIDGE-MOS
60V HBRIDGE-DRIVE-2NP-Channel Advanced Power MOSFET
Absolute maximum ratings
Parameter
Drain-Source voltage
Gate-Source voltage Continuous Drain current @ VGS= 10V; TA=25°C (b)
@ VGS= 10V; TA=70°C (b) @ VGS= 10V; TA=25°C (a) .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 5HB03N8 |
Winsemi |
30V SO8 Complementary enhancementmode MOSFET H-Bridge |
|
| 2 | 5H0165R |
Fairchild Semiconductor |
KA5H0165R |
|
| 3 | 5H02659 |
Fairchild Semiconductor |
KA5H02659 |
|
| 4 | 5H02659R |
ON Semiconductor |
Power Switch |
|
| 5 | 5H02659RN |
Fairchild Semiconductor |
Power Switch |
|
| 6 | 5H0265RC |
Fairchild Semiconductor |
Power Switch |
|
| 7 | 5H0265RC |
ON Semiconductor |
Power Switch |
|
| 8 | 5H0280R |
Fairchild Semiconductor |
KA5H0280R |
|
| 9 | 5H0280R |
ON Semiconductor |
Power Switch |
|
| 10 | 5H0365R |
Fairchild Semiconductor |
Fairchild Power Switch(FPS) |
|
| 11 | 5H0380R |
Fairchild Semiconductor |
Fairchild Power Switch(FPS) |
|
| 12 | 5H11G |
ETC |
Complementary Power Transistors |
|