5HB06N8 maspower Power MOSFET Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

5HB06N8

maspower
5HB06N8
5HB06N8 5HB06N8
zoom Click to view a larger image
Part Number 5HB06N8
Manufacturer maspower
Description This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive. Features • 2 x N + 2 x P channels in a SOIC package • Low voltage (VGS = 4.5 V) gate drive ...
Features low on-resistance achievable with low gate drive. Features
• 2 x N + 2 x P channels in a SOIC package
• Low voltage (VGS = 4.5 V) gate drive Applications
• DC Motor control
• DC-AC Inverters Ordering information Device 5HB06N8 Device marking WFS 5HB06N8 Reel size (inches) 13 Tape width Quantity (mm) per reel 12 2,500 www.maspowersemi.com 1 5HB06N8 H-BRIDGE-MOS 60V HBRIDGE-DRIVE-2NP-Channel Advanced Power MOSFET Absolute maximum ratings Parameter Drain-Source voltage Gate-Source voltage Continuous Drain current @ VGS= 10V; TA=25°C (b) @ VGS= 10V; TA=70°C (b) @ VGS= 10V; TA=25°C (a) ...

Document Datasheet 5HB06N8 Data Sheet
PDF 1.99MB
Distributor Stock Price Buy

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 5HB03N8
Winsemi
30V SO8 Complementary enhancementmode MOSFET H-Bridge Datasheet
2 5H0165R
Fairchild Semiconductor
KA5H0165R Datasheet
3 5H02659
Fairchild Semiconductor
KA5H02659 Datasheet
4 5H02659R
ON Semiconductor
Power Switch Datasheet
5 5H02659RN
Fairchild Semiconductor
Power Switch Datasheet
More datasheet from maspower



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact