5HB06N8 |
Part Number | 5HB06N8 |
Manufacturer | maspower |
Description | This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive. Features • 2 x N + 2 x P channels in a SOIC package • Low voltage (VGS = 4.5 V) gate drive ... |
Features |
low on-resistance achievable with low gate drive.
Features
• 2 x N + 2 x P channels in a SOIC package • Low voltage (VGS = 4.5 V) gate drive Applications • DC Motor control • DC-AC Inverters Ordering information Device 5HB06N8 Device marking WFS 5HB06N8 Reel size (inches) 13 Tape width Quantity (mm) per reel 12 2,500 www.maspowersemi.com 1 5HB06N8 H-BRIDGE-MOS 60V HBRIDGE-DRIVE-2NP-Channel Advanced Power MOSFET Absolute maximum ratings Parameter Drain-Source voltage Gate-Source voltage Continuous Drain current @ VGS= 10V; TA=25°C (b) @ VGS= 10V; TA=70°C (b) @ VGS= 10V; TA=25°C (a) ... |
Document |
5HB06N8 Data Sheet
PDF 1.99MB |
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