5HB03N8 - Winsemi

5HB03N8 30V SO8 Complementary enhancementmode MOSFET H-Bridge

This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive. P1G P1S/P2S P2G Features • • 2 x N + 2 x P channels in a SOIC package Low voltage (VGS = 4.5 V) gate drive P1D/N1D P2D/N2D Applications • • N1G N2G DC Motor control DC-AC Inverters N1S/N2S Ordering information vice De Dev 5HB03N8 Reel size .

Features

low on-resistance achievable with low gate drive. P1G P1S/P2S P2G Features
•
• 2 x N + 2 x P channels in a SOIC package Low voltage (VGS = 4.5 V) gate drive P1D/N1D P2D/N2D Applications
•
• N1G N2G DC Motor control DC-AC Inverters N1S/N2S Ordering information vice De Dev 5HB03N8 Reel size es) (inch (inche 13 Tape width (mm) 12 nti ty Qua Quan tit per reel 2,500 Device marking WFS 5HB03N8 Issue 1.0 - April 2010 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr 5HB03N8 Absolute maximum ratings Parameter Drain-Source voltage Gate-Source voltage Continuous Drain cu.