The SNx4HC138 devices are designed to be used in high-performance memory-decoding or data-routing applications requiring very short propagation delay times. In high-performance memory systems, these decoders can be used to minimize the effects of system decoding. When employed with high-speed memories using a fast enable circuit, the delay times of these de.
• Targeted Specifically for High-Speed Memory Decoders and Data-Transmission Systems
• Wide Operating Voltage Range (2 V to 6 V)
• Outputs Can Drive Up To 10 LSTTL Loads
• Low Power Consumption, 80-µA Maximum ICC
• Typical tpd = 15 ns
• ±4-mA Output Drive at 5 V
• Low Input Current of 1-µA Maximum
• Active Low Outputs ( Selected Output is Low)
• Incorporate Three Enable Inputs to Simplify
Cascading or Data Reception
2 Applications
• LED Displays
• Servers
• White Goods
• Power Infrastructure
• Building Automation
• Factory Automation
3 Description
The SNx4HC138 devices are designed to be use.
The M54HCxxx and M54HCTxxx series is composed of CMOS functions specifically designed to meet the radiation requirements.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 54HC132 |
STMicroelectronics |
Rad-hard high speed 2 to 6V CMOS logic | |
2 | 54HC132 |
Texas Instruments |
Quadruple 2-Input NAND Gates | |
3 | 54HC133 |
National Semiconductor |
13-Input NAND Gate | |
4 | 54HC139 |
STMicroelectronics |
Rad-hard high speed 2 to 6V CMOS logic | |
5 | 54HC139 |
Texas Instruments |
Dual 2-Line To 4-Line Decoders/Demultiplexers | |
6 | 54HC139A |
Motorola |
Dual 1-of-4 Decoder/Demultiplexer | |
7 | 54HC10 |
STMicroelectronics |
Rad-hard high speed 2 to 6V CMOS logic | |
8 | 54HC10 |
Texas Instruments |
Triple 3-Input NAND Gates | |
9 | 54HC109 |
STMicroelectronics |
Rad-hard high speed 2 to 6V CMOS logic | |
10 | 54HC109 |
Texas Instruments |
Dual J-K Positive-Edge-Triggered Flip-Flops | |
11 | 54HC11 |
STMicroelectronics |
Rad-hard high speed 2 to 6V CMOS logic | |
12 | 54HC11 |
Texas Instruments |
Triple 3-Input AND Gate |