This device contains three independent 3-input NAND gates. Each gate performs the Boolean function Y = A ● B ● C in positive logic. Device Information(1) PART NUMBER PACKAGE BODY SIZE (NOM) CD74HC10M SOIC (14) 8.70 mm × 3.90 mm CD74HC10E PDIP (14) 19.30 mm × 6.40 mm CD54HC10F CDIP (14) 21.30 mm × 7.60 mm (1) For all available packages, see the.
• Buffered inputs
• Wide operating voltage range: 2 V to 6 V
• Wide operating temperature range:
-55°C to +125°C
• Supports fanout up to 10 LSTTL loads
• Significant power reduction compared to LSTTL
logic ICs
2 Applications
• Alarm / tamper detect circuit
• S-R latch
1A
1
1B
2
2A
3
2B
4
2C
5
2Y
6
GND
7
3 Description
This device contains three independent 3-input NAND gates. Each gate performs the Boolean function Y = A
● B
● C in positive logic.
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
CD74HC10M
SOIC (14)
8.70 mm × 3.90 mm
CD74HC10E
PDIP (14)
19.30 m.
The M54HCxxx and M54HCTxxx series is composed of CMOS functions specifically designed to meet the radiation requirements.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 54HC109 |
STMicroelectronics |
Rad-hard high speed 2 to 6V CMOS logic | |
2 | 54HC109 |
Texas Instruments |
Dual J-K Positive-Edge-Triggered Flip-Flops | |
3 | 54HC11 |
STMicroelectronics |
Rad-hard high speed 2 to 6V CMOS logic | |
4 | 54HC11 |
Texas Instruments |
Triple 3-Input AND Gate | |
5 | 54HC112 |
Texas Instruments |
Dual J-K Negative-Edge-Triggered Flip-Flops | |
6 | 54HC123 |
STMicroelectronics |
Rad-hard high speed 2 to 6V CMOS logic | |
7 | 54HC125 |
STMicroelectronics |
Rad-hard high speed 2 to 6V CMOS logic | |
8 | 54HC125 |
Texas Instruments |
Quadruple Buffers | |
9 | 54HC132 |
STMicroelectronics |
Rad-hard high speed 2 to 6V CMOS logic | |
10 | 54HC132 |
Texas Instruments |
Quadruple 2-Input NAND Gates | |
11 | 54HC133 |
National Semiconductor |
13-Input NAND Gate | |
12 | 54HC138 |
STMicroelectronics |
Rad-hard high speed 2 to 6V CMOS logic |