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4AK27 Silicon N Channel MOS FET High Speed Power Switching ADE-208-728 (Z) 1st. Edition January 1999 Features • Low on-resistance R DS(on) ≤ 0.15Ω, VGS = 10V, ID = 3.0A • 4V gate drive devices. • High density mounting Outline SP-10 3 D 2G 4 G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1 S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain 4AK27 Abso.
• Low on-resistance R DS(on) ≤ 0.15Ω, VGS = 10V, ID = 3.0A
• 4V gate drive devices.
• High density mounting
Outline
SP-10
3 D 2G 4 G
5 D 6 G
7 D 8 G
9 D
12 34 56 78 9 10
1 S
S 10
1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain
4AK27
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy1 Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP EAR Pch(Tc=25˚C) Pch Tch Tstg
N.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 4AK20 |
Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array |
|
| 2 | 4AK21 |
Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array |
|
| 3 | 4AK22 |
Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array |
|
| 4 | 4AK23 |
Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array |
|
| 5 | 4AK25 |
Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array |
|
| 6 | 4AK26 |
Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array |
|
| 7 | 4AK15 |
Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array |
|
| 8 | 4AK16 |
Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array |
|
| 9 | 4AK17 |
Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array |
|
| 10 | 4AK18 |
Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array |
|
| 11 | 4AK19 |
Hitachi Semiconductor |
Silicon N Channel MOS FET High Speed Power Switching |
|
| 12 | 4A1 |
Galaxy Semi-Conductor |
PLASTIC SILICON RECTIFIER |
|