4AK16 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.18 , VGS = 10 V, I D = 5 A R DS(on) ≤ 0.25 , VGS = 4 V, I D = 5 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for motor driver, solenoid driver and lamp driver 4AK16 Outl.
• Low on-resistance R DS(on) ≤ 0.18 , VGS = 10 V, I D = 5 A R DS(on) ≤ 0.25 , VGS = 4 V, I D = 5 A
• Capable of 4 V gate drive
• Low drive current
• High speed switching
• High density mounting
• Suitable for motor driver, solenoid driver and lamp driver
4AK16
Outline
SP-10
3 D 4 G 2G
5 D 6 G
7 D 8 G
9 D
12 34 56 78 9 10
1S
S 10
1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain
Absolute Maximum Ratings (Ta = 25°C) (1 Unit)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipat.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 4AK15 |
Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array | |
2 | 4AK17 |
Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array | |
3 | 4AK18 |
Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array | |
4 | 4AK19 |
Hitachi Semiconductor |
Silicon N Channel MOS FET High Speed Power Switching | |
5 | 4AK20 |
Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array | |
6 | 4AK21 |
Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array | |
7 | 4AK22 |
Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array | |
8 | 4AK23 |
Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array | |
9 | 4AK25 |
Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array | |
10 | 4AK26 |
Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array | |
11 | 4AK27 |
Hitachi Semiconductor |
Silicon N Channel MOS FET High Speed Power Switching | |
12 | 4A1 |
Galaxy Semi-Conductor |
PLASTIC SILICON RECTIFIER |