4AK23 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2.5 A • Low drive current • High speed switching • High density mounting • Suitable for H-bridged motor driver Outline SP-12TA 1 G 2 D 5 G 4 D 8 G 9 D 12 G 11 D 12 3 4 5 6 7 8 9 10 1112 S 3 S.
• Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2.5 A
• Low drive current
• High speed switching
• High density mounting
• Suitable for H-bridged motor driver
Outline
SP-12TA
1 G
2 D
5 G
4 D
8 G
9 D
12 G
11 D
12
3
4
5
6
7
8
9
10 1112
S 3
S 6
S 7
S 10
1, 5, 8, 12. Gate 2, 4, 9, 11. Drain 3, 6, 7, 10. Source
4AK23
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. P.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 4AK20 |
Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array | |
2 | 4AK21 |
Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array | |
3 | 4AK22 |
Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array | |
4 | 4AK25 |
Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array | |
5 | 4AK26 |
Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array | |
6 | 4AK27 |
Hitachi Semiconductor |
Silicon N Channel MOS FET High Speed Power Switching | |
7 | 4AK15 |
Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array | |
8 | 4AK16 |
Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array | |
9 | 4AK17 |
Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array | |
10 | 4AK18 |
Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array | |
11 | 4AK19 |
Hitachi Semiconductor |
Silicon N Channel MOS FET High Speed Power Switching | |
12 | 4A1 |
Galaxy Semi-Conductor |
PLASTIC SILICON RECTIFIER |