4AC12 - Hitachi Semiconductor

4AC12 Silicon NPN Epitaxial

4AC12 Silicon NPN Epitaxial Application Low frequency power amplifier Outline SP-10 3 2 4 ID ID 9 8 ID 1, 10 Emitter 2, 4, 6, 8 Base 3, 5, 7, 9 Collector ID 10 5 1 1 7 10 6 4AC12 Absolute Maximum Ratings (for each device, Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak cu.

Features

2 A, IB = 2 mA
*1 ID = 2 A Collector to emitter breakdown V(BR)CBO voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current VCEO(SUS) V(BR)EBO I CBO I CEO DC current transfer ratio hFE hFE Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward current Note: 1. Pulse test. VCE(sat) VBE(sat) VD 2 4AC12 Maximum Collector Dissipation Curve 6 Collector power dissipation PC (W) 4 device operation 30 Collector power dissipation PC (W) 3 device operation 4 2 device operation 1 device operation 2 4 device operation.