BL FEATURES Low cost GALAXY ELECTRICAL 4A1 - - - 4A10 VOLTAGE RANGE: 100 --- 1000 V CURRENT: 4.0 A PLASTIC SILICON RECTIFIER DO - 27 Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Isopropanol and similar solvents MECHANICAL DATA Case: JEDEC DO-27,molded plastic Terminals: Axial lead ,solderable .
Low cost GALAXY ELECTRICAL 4A1 - - - 4A10 VOLTAGE RANGE: 100 --- 1000 V CURRENT: 4.0 A PLASTIC SILICON RECTIFIER DO - 27 Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Isopropanol and similar solvents MECHANICAL DATA Case: JEDEC DO-27,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.041 ounces,1.15 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave.
4A1-4A10 Plastic Silicon Rectifiers VOLTAGE RANGE: 100 --- 1000 V CURRENT: 4.0 A Features Low cost Diffused junction L.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 4A1 |
Galaxy Semi-Conductor |
PLASTIC SILICON RECTIFIER | |
2 | 4A1 |
Luguang Electronic |
Plastic Silicon Rectifiers | |
3 | 4A12P-1AH-12R5 |
Bourns Electronic |
Surge Line Protection Module | |
4 | 4A12P-506-500 |
Bourns Electronic |
Surge Line Protection Module | |
5 | 4A12P-516-500 |
Bourns Electronic |
Surge Line Protection Module | |
6 | 4AC12 |
Hitachi Semiconductor |
Silicon NPN Epitaxial | |
7 | 4AC14 |
Hitachi Semiconductor |
Silicon NPN Triple Diffused | |
8 | 4AC17 |
Rohm |
Power Transistor Arrays | |
9 | 4AF05 |
International Rectifier |
(4AF Series) Pressfit Rectifier Diodes | |
10 | 4AF1 |
International Rectifier |
(4AF Series) Pressfit Rectifier Diodes | |
11 | 4AF2 |
International Rectifier |
(4AF Series) Pressfit Rectifier Diodes | |
12 | 4AF4 |
International Rectifier |
(4AF Series) Pressfit Rectifier Diodes |