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4AC12 |
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| Part Number | 4AC12 |
| Manufacturer | Hitachi Semiconductor |
| Description | 4AC12 Silicon NPN Epitaxial Application Low frequency power amplifier Outline SP-10 3 2 4 ID ID 9 8 ID 1, 10 Emitter 2, 4, 6, 8 Base 3, 5, 7, 9 Collector ID 10 5 1 1 7 10 6 4AC12 Absolute Maxi... |
| Features |
2 A, IB = 2 mA*1 ID = 2 A Collector to emitter breakdown V(BR)CBO voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current VCEO(SUS) V(BR)EBO I CBO I CEO DC current transfer ratio hFE hFE Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward current Note: 1. Pulse test. VCE(sat) VBE(sat) VD
2
4AC12
Maximum Collector Dissipation Curve 6 Collector power dissipation PC (W) 4 device operation 30 Collector power dissipation PC (W) 3 device operation 4 2 device operation 1 device operation 2 4 device operation... |
| Document |
 4AC12 Data Sheet
PDF 48.97KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 4AC14 |
Hitachi Semiconductor |
Silicon NPN Triple Diffused |
|
| 2 | 4AC17 |
Rohm |
Power Transistor Arrays |
|
| 3 | 4A1 |
Galaxy Semi-Conductor |
PLASTIC SILICON RECTIFIER |
|
| 4 | 4A1 |
Luguang Electronic |
Plastic Silicon Rectifiers |
|
| 5 | 4A10 |
Galaxy Semi-Conductor |
PLASTIC SILICON RECTIFIER |
|