3SK194 Silicon N-Channel Dual Gate MOS FET Application VHF/UHF TV tuner RF amplifier Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain 3SK194 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol.
0 MHz VDS = 6 V, VG2S = 3 V, I D = 10 mA, f = 900 MHz Test conditions I D = 200 µA, VG1S = VG2S =
–5 V I G1 = ±10 µA, VG2S = VDS = 0 I G2 = ±10 µA, VG1S = VDS = 0 VG1S = ±8 V, V G2S = VDS = 0 VG2S = ±8 V, V G1S = VDS = 0 VDS = 10 V, VG2S = 3 V, I D = 100 µA VDS = 10 V, VG1S = 3 V, I D = 100 µA VDS = 6 V, VG1S = 0, VG2S = 3 V VDS = 6 V, VG2S = 3 V, I D = 10 mA, f = 1 kHz VDS = 6 V, VG2S = 3 V, I D = 10 mA, f = 1 MHz
Gate 1 to source cutoff voltage VG1S(off) Gate 2 to source cutoff voltage VG2S(off) Drain current Forward transfer admittance Input capacitance Output capacitance Reverse transfer .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 3SK195 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET | |
2 | 3SK199 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET | |
3 | 3SK101 |
Toshiba |
Silicon N-Channel Transistor | |
4 | 3SK102 |
Toshiba |
Silicon N-Channel Transistor | |
5 | 3SK103 |
ETC |
Silicon N-Channel MOSFET | |
6 | 3SK113 |
Hitachi |
GaAs N-Channel Dual Gate FET | |
7 | 3SK114 |
Toshiba |
Silicon N-Channel Transistor | |
8 | 3SK115 |
Toshiba |
Silicon N-Channel Transistor | |
9 | 3SK121 |
Toshiba |
Silicon N-Channel MOSFET | |
10 | 3SK122 |
NEC |
MOS Field Effect Transistor | |
11 | 3SK126 |
Toshiba Semiconductor |
N CHANNEL DUAL GATE MOS TYPE (TY TUNER/ VHF RF AMPLIFIER/ TV TUNER VHF MIXER APPLICATIONS) | |
12 | 3SK127 |
Toshiba Semiconductor |
N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER/ UHF MIXER APPLICATIONS) |