) 3SK114 SILICON N CHANNEL DUAL GATE MOS TYPE TV TUNER, VHF RF AMPLIFIER APPLICATIONS. TV TUNER VHF MIXER APPLICATIONS. Unit in mm FEATURES: . Superior Cross Modulation Performance. . Low Reverse Transfer Capacitance : C rss=Q-03pF (Typ.) . Low Noise Figure : NF=1 ,4dB(Typ. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Drain-Source Voltage Gate 1 - Source V.
. Superior Cross Modulation Performance. . Low Reverse Transfer Capacitance : C rss=Q-03pF (Typ.) . Low Noise Figure : NF=1 ,4dB(Typ. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Drain-Source Voltage Gate 1 - Source Voltage Gate 2 - Source Voltage Drain Current Drain Power Dissipation Channel Temperature Storage Temperature Range SYMBOL VDS VG1S VG2S Id Pd Teh Tstg ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL Gate 1 Leakage Current IG1SS Gate 2 Leakage Current IG2SS Drain-Source Voltage V(BR)DSX Drain Current Gatel-Source Cut-off Voltage Gate2-Source Cut-off Voltage J-D.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 3SK113 |
Hitachi |
GaAs N-Channel Dual Gate FET | |
2 | 3SK115 |
Toshiba |
Silicon N-Channel Transistor | |
3 | 3SK101 |
Toshiba |
Silicon N-Channel Transistor | |
4 | 3SK102 |
Toshiba |
Silicon N-Channel Transistor | |
5 | 3SK103 |
ETC |
Silicon N-Channel MOSFET | |
6 | 3SK121 |
Toshiba |
Silicon N-Channel MOSFET | |
7 | 3SK122 |
NEC |
MOS Field Effect Transistor | |
8 | 3SK126 |
Toshiba Semiconductor |
N CHANNEL DUAL GATE MOS TYPE (TY TUNER/ VHF RF AMPLIFIER/ TV TUNER VHF MIXER APPLICATIONS) | |
9 | 3SK127 |
Toshiba Semiconductor |
N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER/ UHF MIXER APPLICATIONS) | |
10 | 3SK131 |
NEC |
MOS FIELD EFFECT TRANSISTOR | |
11 | 3SK134B |
NEC |
RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD | |
12 | 3SK135A |
NEC |
RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD |