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3SK115 SILICON N CHANNEL DUAL GATE MOS TYPE TV TUNER, UHF RF AMPLIFIER APP LICATION. Unit in mm 4 FEATURES . Superior Cross Modulation Pe rf ormance . Low Crss : C rss =0.03pF . Low Noise : NF=3.2dB •S Q6 0.3 U M£LaJ 9.8 MI N. 3 y^O.75 "||."0-6 5 CO' 2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Drain-Source Voltage Gatel-Source Voltage Gate2-Source .
. Superior Cross Modulation Pe rf ormance . Low Crss : C rss =0.03pF . Low Noise : NF=3.2dB
•S
Q6
0.3
U
M£LaJ 9.8 MI N.
3 y^O.75
"||."0-6 5
CO'
2
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Drain-Source Voltage Gatel-Source Voltage Gate2-Source Voltage Drain Current Power Dissipation Channel Temperature Storage Temperature Range
SYMBOL VDS vgis VG2S id Pd Teh T stg
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Gatel Leakage Current
IG1SS
Gate2 Leakage Current
IG2SS
Drain Source Voltage
V(BR)DSX
RATING UNIT
15
V
±8
V
±8
V
30
mA
200
mW
125
°C
-55- +125 °C.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 3SK113 |
Hitachi |
GaAs N-Channel Dual Gate FET |
|
| 2 | 3SK114 |
Toshiba |
Silicon N-Channel Transistor |
|
| 3 | 3SK101 |
Toshiba |
Silicon N-Channel Transistor |
|
| 4 | 3SK102 |
Toshiba |
Silicon N-Channel Transistor |
|
| 5 | 3SK103 |
ETC |
Silicon N-Channel MOSFET |
|
| 6 | 3SK121 |
Toshiba |
Silicon N-Channel MOSFET |
|
| 7 | 3SK122 |
NEC |
MOS Field Effect Transistor |
|
| 8 | 3SK126 |
Toshiba Semiconductor |
N CHANNEL DUAL GATE MOS TYPE (TY TUNER/ VHF RF AMPLIFIER/ TV TUNER VHF MIXER APPLICATIONS) |
|
| 9 | 3SK127 |
Toshiba Semiconductor |
N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER/ UHF MIXER APPLICATIONS) |
|
| 10 | 3SK131 |
NEC |
MOS FIELD EFFECT TRANSISTOR |
|
| 11 | 3SK134B |
NEC |
RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD |
|
| 12 | 3SK135A |
NEC |
RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD |
|