3SK186 - Hitachi Semiconductor

3SK186 Silicon N-Channel Dual Gate MOS FET

3SK186 Silicon N-Channel Dual Gate MOS FET Application UHF TV tuner RF amplifier Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain 3SK186 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS.

Features

= 0 I G2 = ±10 µA, VG1S = VDS = 0 VG1S = ±8 V, VG2S = VDS = 0 VG2S = ±8 V, VG1S = VDS = 0 VDS = 6 V, VG2S = 3V, I D = 100 µA VDS = 6 V, VG1S = 3V, I D = 100 µA VDS = 6 V, VG2S = 3V, VG1S = 0 VDS = 6 V, VG2S = 3V, I D = 10 mA, f = 1 kHz VDS = 6 V, VG2S = 3V, I D = 10 mA, f = 1 MHz Gate 1 to source cutoff voltage VG1S(off) Gate 2 to source cutoff voltage VG2S(off) Drain current Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Note: Marking is “FI
  –”. I DSS |yfs| Ciss Coss Crss PG NF 2 3SK186 Maximum Channel Power Dissipation.