DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK134B RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • High Power Gain : • Low Noise Figure : Gps = 23.0 dB TYP. (@ = 900 MHz) NF = 2.4 dB TYP. (@ = 900 MHz) PACKAGE DIMENSIONS (Unit : mm) 2.8 +0.2 – 0.3 0.4 +0.1 – 0.05 • Suitable for use as RF amplifie.
• High Power Gain :
• Low Noise Figure : Gps = 23.0 dB TYP. (@ = 900 MHz) NF = 2.4 dB TYP. (@ = 900 MHz)
PACKAGE DIMENSIONS (Unit : mm)
2.8 +0.2
– 0.3
0.4 +0.1
– 0.05
• Suitable for use as RF amplifier in UHF TV tuner.
• Automatically Mounting :
• Surface Mount Package : Embossed Type Taping 4 Pins Mini Mold (EIAJ: SC-61)
2.9±0.2 0.95
1.5 +0.2
– 0.1
2
(1.8)
Gate1 to Source Voltage Gate2 to Source Voltage Gate1 to Drain Voltage Gate2 to Drain Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature
*1 : RL ≥ 10 kΩ
VG1S VG2S VG1D VG2D ID PD Tch Tstg
±8
(±10.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 3SK131 |
NEC |
MOS FIELD EFFECT TRANSISTOR | |
2 | 3SK135A |
NEC |
RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD | |
3 | 3SK101 |
Toshiba |
Silicon N-Channel Transistor | |
4 | 3SK102 |
Toshiba |
Silicon N-Channel Transistor | |
5 | 3SK103 |
ETC |
Silicon N-Channel MOSFET | |
6 | 3SK113 |
Hitachi |
GaAs N-Channel Dual Gate FET | |
7 | 3SK114 |
Toshiba |
Silicon N-Channel Transistor | |
8 | 3SK115 |
Toshiba |
Silicon N-Channel Transistor | |
9 | 3SK121 |
Toshiba |
Silicon N-Channel MOSFET | |
10 | 3SK122 |
NEC |
MOS Field Effect Transistor | |
11 | 3SK126 |
Toshiba Semiconductor |
N CHANNEL DUAL GATE MOS TYPE (TY TUNER/ VHF RF AMPLIFIER/ TV TUNER VHF MIXER APPLICATIONS) | |
12 | 3SK127 |
Toshiba Semiconductor |
N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER/ UHF MIXER APPLICATIONS) |